SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046490362

描述：Trans MOSFET P-CH 40V 9.9A 8-Pin SOIC N T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min45 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current14 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time12 ns, 27 ns

Transistor Type1 P-Channel

Typical Turn-Off Delay Time39 ns, 44 ns

MXHTS85411001

Qg - Gate Charge66 nC

Package / CaseSO-8

Mounting StyleSMD/SMT

JPHTS8541100901

Channel ModeEnhancement

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541100090

CNHTS8541290000

PackagingMouseReel

PackagingReel

PackagingCut Tape

TARIC8541290000

Unit Weight0.005253 oz

Pd - Power Dissipation3.2 W

BrandVishay / Siliconix

ImageVishay / Siliconix Si4401FDY-T1-GE3

Product TypeMOSFET

Factory Pack Quantity2500

SubcategoryMOSFETs

ManufacturerVishay

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time6 ns, 75 ns

USHTS8541100080

DescriptionMOSFET -40V Vds 20V Vgs SO-8

Moisture Sensitivity Level1 (Unlimited)