参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current17 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.75 mm
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance9.5 mOhms
Package / CaseSO-8
RoHS Details
Factory Pack Quantity2500
ImageVishay Semiconductors SI4174DY-T1-GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Width3.9 mm
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET 30V Vds 20V Vgs SO-8
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge27 nC
MXHTS85423999
SeriesSI4
Product TypeMOSFET
USHTS8542390001
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4174DY-GE3
Pd - Power Dissipation5 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)