SQJA62EP-T1_GE3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046490459

描述：MOSFET AEC-Q101 N-CH 60V POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:68W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175蚓; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

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商品参数

参数项参数值

Forward Transconductance - Min70 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current75 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time17 ns

Rds On - Drain-Source Resistance3.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time32 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge85 nC

CNHTS8541290000

Package / CasePowerPAK-SO-8-4

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 175 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

PackagingReel

PackagingCut Tape

Fall Time14 ns

TARIC8541290000

RoHS Details

SeriesSQ

BrandVishay Semiconductors

ImageVishay Semiconductors SQJA62EP-T1_GE3

Unit Weight0.017870 oz

Factory Pack Quantity3000

Product TypeMOSFET

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerVishay

Pd - Power Dissipation68 W

DescriptionMOSFET N-Channel 60V PowerPAK SO-8L

USHTS8541290095

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time5 ns

Moisture Sensitivity Level1 (Unlimited)