参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current19 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay / Siliconix SUD19P06-60L-E3
Rds On - Drain-Source Resistance60 mOhms
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingMouseReel
PackagingCut Tape
PackagingReel
DescriptionMOSFET 60V 19A 46W 60mohm @ 10V
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay / Siliconix
Factory Pack Quantity2000
Qg - Gate Charge40 nC
Product TypeMOSFET
MXHTS85412999
ManufacturerVishay
RoHS Details
SeriesSUD
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.050717 oz
CNHTS8541290000
Pd - Power Dissipation46 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)