参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current350 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.9 ns
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time18.2 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge1.23 nC
PackagingReel
PackagingCut Tape
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN33D9LV-7A
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V 30V SOT563 T&R 3K
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time13.6 ns
Pd - Power Dissipation0.43 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time2.6 ns