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SCTH35N65G2V-7AG
厂牌：STMICROELECTRONICS
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046490541
描述：ST SIC MOSFET SCTH35N65G2V-7AG
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.2 V
TechnologySiC
Id - Continuous Drain Current45 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance37 mOhms
Transistor Type1 N - Channel
Typical Turn-Off Delay Time35 ns
Qg - Gate Charge73 nC
Package / CaseH2PAK-7
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageSTMicroelectronics SCTH35N65G2V-7AG
BrandSTMicroelectronics
Factory Pack Quantity1000
Pd - Power Dissipation208 W
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD NEW MAT & PWR SOLUTION
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
Number of Channels1 Channel
Rise Time9 ns