SISA40DN-T1-GE3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046490545

描述：MOSFET N-CH 20V 162A 150DEG C 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.00092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

Forward Transconductance - Min60 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current162 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 12 V

Typical Turn-On Delay Time20 ns

Rds On - Drain-Source Resistance1.1 mOhms

Transistor Type1 N-Channel TrenchFET Power MOSFET

Typical Turn-Off Delay Time40 ns

Qg - Gate Charge53 nC

Package / CasePowerPAK-1212-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

Minimum Operating Temperature- 55 C

Fall Time10 ns

CNHTS8541290000

PackagingCut Tape

PackagingReel

PackagingMouseReel

TARIC8541290000

Unit Weight0.005046 oz

SeriesSIS

Pd - Power Dissipation52 W

BrandVishay Semiconductors

ImageVishay Semiconductors SISA40DN-T1-GE3

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

Vds - Drain-Source Breakdown Voltage20 V

ManufacturerVishay

Product CategoryMOSFET

Number of Channels1 Channel

USHTS8541290095

Rise Time5 ns, 13 ns

TradenameTrenchFET, PowerPAK

DescriptionMOSFET 20V Vds 12V Vgs PowerPAK 1212-8

Moisture Sensitivity Level1 (Unlimited)