参数项参数值
参数项参数值
ConfigurationSingle
Width3.3 mm
Vgs th - Gate-Source Threshold Voltage650 mV
TechnologySi
Id - Continuous Drain Current104 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
CNHTS8541290000
Typical Turn-On Delay Time13 ns
Height1 mm
MXHTS85412999
Length3.3 mm
Transistor Type1 P-Channel Power MOSFET
Typical Turn-Off Delay Time35 ns
Package / CaseVSON-CLIP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Qg - Gate Charge10.8 nC
TARIC8541290000
ManufacturerTexas Instruments
RoHS Details
BrandTexas Instruments
ImageTexas Instruments CSD25404Q3
Factory Pack Quantity2500
SubcategoryMOSFETs
SeriesCSD25404Q3
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V Pch MOSFET
Channel ModeEnhancement
USHTS8541290095
Fall Time13 ns
Unit Weight0.001549 oz
Pd - Power Dissipation96 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)