参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
ManufacturerVishay
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Rds On - Drain-Source Resistance9.5 mOhms
Package / CasePowerPAK-1212-8
Factory Pack Quantity3000
BrandVishay Semiconductors
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageVishay Semiconductors SIS438DN-T1-GE3
SubcategoryMOSFETs
Qg - Gate Charge23 nC
Product CategoryMOSFET
DescriptionMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
Product TypeMOSFET
MXHTS85412101
SeriesSIS
USHTS8541210095
Channel ModeEnhancement
CNHTS8541290000
Part # AliasesSIS438DN-GE3
Pd - Power Dissipation27.7 W
TradenameTrenchFET, PowerPAK
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)