NVTFS5C680NLTAG

厂牌：onsemi

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046490562

描述：MOSFET AEC-Q101 N-CH 60V 20A WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:20W; Transistor Case Style:WDFN; No. of Pins:8Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

下载数据手册

商品参数

参数项参数值

Forward Transconductance - Min11 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time6.5 ns

Rds On - Drain-Source Resistance22 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time13 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge6 nC

Package / CaseWDFN-8

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingReel

PackagingMouseReel

CNHTS8541290000

BrandON Semiconductor

ManufacturerON Semiconductor

Factory Pack Quantity1500

TARIC8541290000

Product CategoryMOSFET

Channel ModeEnhancement

Fall Time23 ns

Product TypeMOSFET

RoHS Details

DescriptionMOSFET AFSM T6 60V LL U8FL

ImageON Semiconductor NVTFS5C680NLTAG

Unit Weight0.000600 oz

SubcategoryMOSFETs

USHTS8541290095

Pd - Power Dissipation20 W

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time25 ns

Moisture Sensitivity Level1 (Unlimited)