参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 P-Channel
Width2 mm
Height0.75 mm
Length2 mm
MXHTS85412999
Qg - Gate Charge29 nC
KRHTS8541299000
Package / CaseMicroFET-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001058 oz
SeriesFDMA905P
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild FDMA905P
ManufacturerON Semiconductor
Pd - Power Dissipation900 mW
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage12 V
DescriptionMOSFET -12V Single P-Chan PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)