参数项参数值
参数项参数值
Forward Transconductance - Min64.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current64 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance8.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Mounting StyleSMD/SMT
Package / CaseWDFN-8
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor NTTFS6H850NLTAG
PackagingCut Tape
PackagingReel
PackagingMouseReel
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5 ns
BrandON Semiconductor
ManufacturerON Semiconductor
Unit Weight0.001043 oz
Factory Pack Quantity1500
Product CategoryMOSFET
USHTS8541290040
Product TypeMOSFET
DescriptionMOSFET 80V 108A 8.66m?Ohm Single N-Channel
Pd - Power Dissipation73 W
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time21 ns
Moisture Sensitivity Level1 (Unlimited)