参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance155 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge22.7 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
ImageInfineon Technologies IRLR3410TRLPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon Technologies
Factory Pack Quantity3000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation52 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)