参数项参数值
参数项参数值
Forward Transconductance - Min37 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance14 mOhms
Typical Turn-Off Delay Time67 ns
MXHTS85412999
Qg - Gate Charge95 nC
Package / CasePowerPAK-SO-8-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time17 ns
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
Unit Weight0.018762 oz
Pd - Power Dissipation45 W
BrandVishay / Siliconix
ImageVishay / Siliconix SQJ415EP-T1_GE3
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Vds - Drain-Source Breakdown Voltage40 V
ManufacturerVishay
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time4 ns
DescriptionMOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L
Moisture Sensitivity Level1 (Unlimited)