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FDD770N15A
厂牌：安森美(onsemi)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046490931
描述：场效应管(MOSFET) FDD770N15A TO-252
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min20 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10.3 ns
Width6.22 mm
Rds On - Drain-Source Resistance61 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15.8 ns
MXHTS85412999
Length6.73 mm
KRHTS8541299000
Qg - Gate Charge8.4 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
SeriesFDD770N15A
SubcategoryMOSFETs
Fall Time2.8 ns
BrandON Semiconductor / Fairchild
Factory Pack Quantity2500
Unit Weight0.009184 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 150V/18V N Channel PowerTrench MOSFET
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation56.8 W
Vds - Drain-Source Breakdown Voltage150 V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time3.1 ns