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DMP2021UFDF-7
厂牌：Diodes Incorporated
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046491038
描述：MOSFET P-CH 20V 9A 6UDFN
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage350 mV
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Height0.6 mm
Length2 mm
KRHTS8541219000
Typical Turn-On Delay Time7.5 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
ProductEnhancement Mode MOSFET
CAHTS8541210000
Rds On - Drain-Source Resistance22 mOhms
Typical Turn-Off Delay Time125 ns
Package / CaseDFN-2020-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width2 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMP2021UFDF-7
SubcategoryMOSFETs
Qg - Gate Charge59 nC
Product CategoryMOSFET
DescriptionMOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF
Product TypeMOSFET
MXHTS85412101
SeriesDMP2021
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.740753 oz
Fall Time96 ns
CNHTS8541210000
Pd - Power Dissipation2.02 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time25 ns
TypeEnhancement Mode MOSFET
Moisture Sensitivity Level1 (Unlimited)