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DMC3021LSD-13
厂牌：Diodes Incorporated
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046491216
描述：MOSFET N/P-CH 30V 8.5A/7A SO8
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current8.5 A, 7 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns, 10.1 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance21 mOhms, 39 mOhms
KRHTS8541299000
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time26.3 ns, 50.1 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSOIC-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge7.8 nC, 21.1 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMC3021LSD-13
Factory Pack Quantity2500
SeriesDMC3021
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET COMP PAIR
Channel ModeEnhancement
Fall Time8.55 ns, 22.2 ns
USHTS8541290095
Unit Weight0.002610 oz
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time4.5 ns, 6.5 ns
Moisture Sensitivity Level1 (Unlimited)