CSD17575Q3T

厂牌:Texas Instruments
包装:Tape & Reel (TR) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000046492851
描述: Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R
最新价格近期成交42单+
数量价格(含税)
250¥6.6193
500¥6.0226
750¥5.7188
1250¥5.3767
1750¥5.1748
2500¥4.9779
库存:0交期:4-7Days起订:250增量:250
数量:
X
6.6193(单价)
合计:
¥1654.83
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min118 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current60 A
Transistor PolarityN-Channel
MXHTS85412999
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4 ns
Length3.3 mm
Width3.3 mm
Height1 mm
KRHTS8541299000
Rds On - Drain-Source Resistance2.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseVSON-CLIP-8
CAHTS8541290000
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge23 nC
Factory Pack Quantity250
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageTexas Instruments CSD17575Q3T
Product TypeMOSFET
BrandTexas Instruments
TARIC8541290000
DescriptionMOSFET 30V,NCh NexFET Pwr MOSFET
RoHS Details
Product CategoryMOSFET
SeriesCSD17575Q3
ManufacturerTexas Instruments
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time3 ns
Unit Weight0.000847 oz
USHTS8541290095
Pd - Power Dissipation108 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)