参数项参数值
参数项参数值
Forward Transconductance - Min1.3 S
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current1.7 A
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.8 ns
Vgs - Gate-Source Voltage- 12 V, + 12 V
Height1.02 mm
Width1.4 mm
Length3.04 mm
Typical Turn-On Delay Time2.4 ns
Mounting StyleSMD/SMT
MXHTS85412101
ProductMOSFET Small Signal
Factory Pack Quantity3000
CNHTS8541210000
KRHTS8541219000
BrandDiodes Incorporated
Unit Weight0.002116 oz
SubcategoryMOSFETs
Qg - Gate Charge3.4 nC
Package / CaseSOT-23-3
CAHTS8541210000
JPHTS8541210101
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Product TypeMOSFET
DescriptionMOSFET 20V N-Chnl HDMOS
Channel ModeEnhancement
ImageDiodes Incorporated ZXM61N02FTA
TARIC8541210000
ManufacturerDiodes Incorporated
Fall Time4.2 ns
Product CategoryMOSFET
RoHS Details
Pd - Power Dissipation806 mW
USHTS8541210095
TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time4.2 ns
Moisture Sensitivity Level1 (Unlimited)