参数项参数值
参数项参数值
Forward Transconductance - Min1.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current1.7 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time2.4 ns
Width1.4 mm
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.8 ns
Height1.02 mm
Length3.04 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge3.4 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Factory Pack Quantity3000
CNHTS8541210000
BrandDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET 20V N-Chnl HDMOS
Channel ModeEnhancement
ImageDiodes Incorporated ZXM61N02FTA
TARIC8541210000
ManufacturerDiodes Incorporated
Fall Time4.2 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.002116 oz
SubcategoryMOSFETs
Pd - Power Dissipation806 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time4.2 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)