参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current10 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Width9.65 mm
Height4.83 mm
Length10.29 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight0.081448 oz
SeriesMJB45H11
BrandON Semiconductor
ImageON Semiconductor MJB45H11G
ManufacturerON Semiconductor
Pd - Power Dissipation50 W
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity50
Product TypeBJTs - Bipolar Transistors
USHTS8541290075
DescriptionBipolar Transistors - BJT 8A 80V 50W PNP
Moisture Sensitivity Level1 (Unlimited)