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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id3.3V @ 50µA
Supplier Device PackagePG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 30 V