参数项参数值
参数项参数值
Forward Transconductance - Min160 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current300 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance400 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time149 ns
Width10.1 mm
Height2.4 mm
Length10.58 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge122 nC
Package / CasePG-HSOF-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time37 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageInfineon Technologies IPT004N03LATMA1
RoHS Details
Unit Weight0.027232 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation300 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET TRENCH <= 40V
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage30 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time17 ns