DMN2013UFDE-7

厂牌：美台(DIODES)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046494473

描述：DIODES INC. - DMN2013UFDE-7 - Power MOSFET, N Channel, 20 V, 10.5 A, 0.0084 ohm, U-DFN2020, Surface Mount 库存分布: SG: 0 UK: 3000; packSize: 0; minimumOrderQty: 1; rohs: YES

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage500 mV

TechnologySi

Id - Continuous Drain Current10.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

CNHTS8541210000

Typical Turn-On Delay Time9.9 ns

MXHTS85412101

Rds On - Drain-Source Resistance8.4 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time66.4 ns

KRHTS8541219000

JPHTS8541210101

Minimum Operating Temperature- 55 C

CAHTS8541210000

Mounting StyleSMD/SMT

Package / CaseDFN-2020-6

Maximum Operating Temperature+ 150 C

PackagingMouseReel

PackagingCut Tape

PackagingReel

Qg - Gate Charge25.8 nC

BrandDiodes Incorporated

TARIC8541210000

ManufacturerDiodes Incorporated

Factory Pack Quantity3000

ImageDiodes Incorporated DMN2013UFDE-7

Product CategoryMOSFET

RoHS Details

SeriesDMN2013

DescriptionMOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

Product TypeMOSFET

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time20.8 ns

USHTS8541210095

Unit Weight0.000238 oz

Pd - Power Dissipation660 mW

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time24.5 ns