ZXT10P12DE6TA

厂牌：美台(DIODES)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046494523

描述：三极管(BJT) ZXT10P12DE6TA SOT-26

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商品参数

参数项参数值

DC Current Gain hFE Max300 at 10 mA, 2 V

Gain Bandwidth Product fT110 MHz

Collector- Base Voltage VCBO- 12 V

Maximum DC Collector Current3 A

Collector- Emitter Voltage VCEO Max- 12 V

Continuous Collector Current- 3 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

Width1.75 mm

Collector-Emitter Saturation Voltage- 195 mV

Height1.3 mm

DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V

Length3 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-23-6

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

CNHTS8541290000

Factory Pack Quantity3000

BrandDiodes Incorporated

SeriesZXT10

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT 12V PNP SuperSOT4

TARIC8541290000

ManufacturerDiodes Incorporated

ImageDiodes Incorporated ZXT10P12DE6TA

Product CategoryBipolar Transistors - BJT

RoHS Details

Unit Weight0.000229 oz

SubcategoryTransistors

Pd - Power Dissipation1.1 W

USHTS8541290095