参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 10 mA, 2 V
Gain Bandwidth Product fT120 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.8 mm
Collector-Emitter Saturation Voltage230 mV
Height1.3 mm
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V
Length3.1 mm
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXT10
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 15V NPN SuperSOT4
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXT10N15DE6TA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W