参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO- 20 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 2.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width1.8 mm
Collector-Emitter Saturation Voltage- 240 mV
Height1.3 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V
Length3.1 mm
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXT10
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT 20V PNP SuperSOT4
ImageDiodes Incorporated ZXT10P20DE6TA
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W