参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current8.7 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time5.3 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time34 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseU-DFN2020-6
PackagingReel
PackagingCut Tape
PackagingMouseReel
Mounting StyleSMD/SMT
Qg - Gate Charge19.6 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
SubcategoryMOSFETs
ImageDiodes Incorporated DMP3026SFDE-7
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30V
Channel ModeEnhancement
Fall Time26 ns
USHTS8541290095
Unit Weight0.000238 oz
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time23 ns