参数项参数值
参数项参数值
Gain Bandwidth Product fT165 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.8 mm
Collector-Emitter Saturation Voltage225 mV
Height1.3 mm
Length3.1 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
CNHTS8541290000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 50V NPN SuperSOT4
ImageDiodes Incorporated ZXT10N50DE6TA
SeriesZXT10N50
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W
USHTS8541290095