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DMN2015UFDE-7
厂牌：美台(DIODES)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046494616
描述：场效应管(MOSFET) DMN2015UFDE-7 UDFN2020-6-EP
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current10.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
KRHTS8541219000
Typical Turn-On Delay Time7.4 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Rds On - Drain-Source Resistance9.3 mOhms
Typical Turn-Off Delay Time43.6 ns
Package / CaseDFN-2020-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN2015UFDE-7
SubcategoryMOSFETs
Qg - Gate Charge45.6 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Product TypeMOSFET
MXHTS85412101
SeriesDMN2015
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000238 oz
Fall Time10.9 ns
CNHTS8541210000
Pd - Power Dissipation660 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time16.8 ns