ZXT10P40DE6TA

厂牌：美台(DIODES)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046494643

描述：三极管(BJT) ZXT10P40DE6TA SOT-23-6

商品参数

参数项参数值

DC Current Gain hFE Max300 at 10 mA, 2 V

Gain Bandwidth Product fT190 MHz

Collector- Base Voltage VCBO- 40 V

Maximum DC Collector Current2 A

Collector- Emitter Voltage VCEO Max- 40 V

Continuous Collector Current- 2 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

Width1.8 mm

Collector-Emitter Saturation Voltage- 210 mV

Height1.3 mm

DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 1 A, 2 V, 60 at 1.5 A, 2 V, 12 at 3 A, 2 V

Length3.1 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-23-6

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity3000

BrandDiodes Incorporated

SeriesZXT10

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT 40V PNP SuperSOT4

ManufacturerDiodes Incorporated

TARIC8541290000

ImageDiodes Incorporated ZXT10P40DE6TA

Product CategoryBipolar Transistors - BJT

RoHS Details

Unit Weight0.000229 oz

SubcategoryTransistors

Pd - Power Dissipation1.1 W

USHTS8541290095