参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT90 MHz
Collector- Base Voltage VCBO- 25 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7.5 V
Width1.8 mm
Collector-Emitter Saturation Voltage- 165 mV
Height1.3 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 4 A, 2 V, 20 at 10 A, 2 V
Length3.1 mm
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXT13P
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 20V PNP SuperSOT4
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXT13P20DE6TA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W