参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 10 mA, 2 V
Gain Bandwidth Product fT96 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current4.5 A
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current4.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7.5 V
Width1.8 mm
Collector-Emitter Saturation Voltage170 mV
Height1.3 mm
DC Collector/Base Gain hfe Min250 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 5 A, 2 V, 15 at 15 A, 2 V
Length3.1 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXT13N
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 20V NPN SuperSOT4
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXT13N20DE6TA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W
USHTS8541290095