DMN2011UFDE-7

厂牌：美台(DIODES)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046494738

描述：DIODES INC. - DMN2011UFDE-7 - Power MOSFET, N Channel, 20 V, 11.7 A, 0.0065 ohm, U-DFN2020, Surface Mount 库存分布: SG: 0 UK: 2681; packSize: 0; minimumOrderQty: 1; rohs: YES

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current11.7 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

KRHTS8541299000

Typical Turn-On Delay Time3.6 ns

ManufacturerDiodes Incorporated

Minimum Operating Temperature- 55 C

JPHTS8541290100

RoHS Details

CAHTS8541290000

Rds On - Drain-Source Resistance15 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time21.6 ns

Package / CaseDFN-2020-6

Factory Pack Quantity3000

BrandDiodes Incorporated

TARIC8541290000

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageDiodes Incorporated DMN2011UFDE-7

SubcategoryMOSFETs

Qg - Gate Charge56 nC

Product CategoryMOSFET

DescriptionMOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W

Product TypeMOSFET

MXHTS85412999

SeriesDMN2011

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.687842 oz

Fall Time13.5 ns

CNHTS8541290000

Pd - Power Dissipation1.97 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time2.6 ns