参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.6 ns
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.1 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseDFN-2020-6
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
Qg - Gate Charge22.4 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN6040SFDE-7
Factory Pack Quantity3000
SeriesDMN60
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
Channel ModeEnhancement
Fall Time4 ns
USHTS8541210095
Unit Weight0.000238 oz
Pd - Power Dissipation660 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time8.1 ns