参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT290 MHz
Collector- Base Voltage VCBO25 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1.02 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 160 at 1.5 A, 2 V, 60 at 4 A, 2 V
MXHTS85412999
Length3.04 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 125 C
CNHTS8541210000
PackagingCut Tape
PackagingReel
ImageDiodes Incorporated ZXTP25020DFLTA
TARIC8541290000
PackagingMouseReel
RoHS Details
SeriesZXTP250
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000282 oz
DescriptionBipolar Transistors - BJT PNP 20V HG Trans.
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation350 mW