参数项参数值
参数项参数值
DC Current Gain hFE Max220
Gain Bandwidth Product fT125 MHz
Collector- Base Voltage VCBO- 100 V
ConfigurationSingle
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 100 V
Continuous Collector Current- 3 A
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 8 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Collector-Emitter Saturation Voltage- 110 mV
Package / CaseLFPAK56-5
DC Collector/Base Gain hfe Min150
ImageNexperia PHPT61003PYX
RoHS Details
PackagingMouseReel
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 175 C
BrandNexperia
TARIC8541290000
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN High Power BipolarTransistor
ManufacturerNexperia
Factory Pack Quantity1500
MXHTS85412999
Product TypeBJTs - Bipolar Transistors
USHTS8541290075
Unit Weight0.002335 oz
CNHTS8541290000
Part # Aliases934067882115
Pd - Power Dissipation25 W
Moisture Sensitivity Level1 (Unlimited)