参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 1.6 V
DC Collector/Base Gain hfe Min75
Width3.5 mm
Height1.57 mm
Length6.5 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.003951 oz
SeriesPZT2907A
ImageON Semiconductor PZT2907AT3G
BrandON Semiconductor
ManufacturerON Semiconductor
Pd - Power Dissipation1.5 W
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 600mA 60V PNP
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)