参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
KRHTS8541299000
Collector-Emitter Saturation Voltage1.6 V
CNHTS8541210000
DC Collector/Base Gain hfe Min50 at 500 mA, 10 V
Minimum Operating Temperature- 65 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandCentral Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
ImageCentral Semiconductor CMPT2907A TR PBFREE
TARIC8541290000
RoHS Details
Product TypeBJTs - Bipolar Transistors
ManufacturerCentral Semiconductor
DescriptionBipolar Transistors - BJT PNP GEN PURPOSE
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541290095
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)