参数项参数值
参数项参数值
Gain Bandwidth Product fT75 MHz
Collector- Base Voltage VCBO- 300 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 300 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.25 V
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541210000
DescriptionBipolar Transistors - BJT PNP High Voltage
BrandDiodes Incorporated
ImageDiodes Incorporated FMMT597TA
Product TypeBJTs - Bipolar Transistors
SeriesFMMT59
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation500 mW
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)