参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 0.65 V
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated FMMT589TA
SubcategoryTransistors
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
SeriesFMMT58
Unit Weight0.000282 oz
USHTS8541210075
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP Medium Power
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)