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FMMT555TA
厂牌：Diodes Incorporated
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000046495216
描述：TRANS PNP 150V 1A SOT-23-3
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max50 at 10 mA, 10 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 160 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 0.35 V
Height1.1 mm
DC Collector/Base Gain hfe Min50 at 10 mA, 10 V, 50 at 300 mA, 10 V
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
ImageDiodes Incorporated FMMT555TA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
SeriesFMMT55
ManufacturerDiodes Incorporated
USHTS8541290095
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP High Voltage
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)