参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 3 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3.6 ns
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 P-Channel
Qg - Gate Charge4.1 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time7.3 ns
PackagingReel
Unit Weight0.000317 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation1.17 W
ImageDiodes Incorporated DMP6350SQ-13
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity10000
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage60 V
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Rise Time3.8 ns
USHTS8541290095
DescriptionMOSFET MOSFET BVDSS: 41V 60V SOT23 T&R 10K