参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current1.5 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3.6 ns
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 P-Channel
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge4.1 nC
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMP6350SQ-7
BrandDiodes Incorporated
RoHS Details
TARIC8541290000
DescriptionMOSFET MOSFET BVDSS: 41V 60V SOT23 T&R 3K
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerDiodes Incorporated
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time7.3 ns
Unit Weight0.000317 oz
USHTS8541290095
Pd - Power Dissipation1.17 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.8 ns
Moisture Sensitivity Level1 (Unlimited)