参数项参数值
参数项参数值
Forward Transconductance - Min4.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 6 V
QualificationAEC-Q101
Typical Turn-On Delay Time32 ns
Rds On - Drain-Source Resistance29.8 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time107 ns
Qg - Gate Charge12.8 nC
Package / CaseSOT-23F-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
ImageToshiba SSM3J378R,LF
SeriesSSM3J378R
BrandToshiba
Pd - Power Dissipation2 W
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerToshiba
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET P-CHAMMEL VDSS:-20V VGSS:-8/+6
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
TradenameU-MOSVI
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)