参数项参数值
参数项参数值
Forward Transconductance - Min114 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current195 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 16 V
Typical Turn-On Delay Time69 ns
Rds On - Drain-Source Resistance1.7 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time64 ns
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Qg - Gate Charge172.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageVishay Semiconductors SIRA99DP-T1-GE3
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time57 ns
BrandVishay Semiconductors
ManufacturerVishay
Factory Pack Quantity3000
Unit Weight0.344627 oz
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V P-CHANNEL (D-S)
Pd - Power Dissipation104 W
Vds - Drain-Source Breakdown Voltage30 V
TradenamePowerPAK
Number of Channels1 Channel
Rise Time183 ns
Moisture Sensitivity Level1 (Unlimited)