参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current1.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 5 V, + 5 V
Typical Turn-On Delay Time5 us
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 us
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
CNHTS8541290000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXMS6004
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET INTELLIFET MOSFET 60V N CHAN
TARIC8541290000
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMS6004DGTA
Product CategoryMOSFET
Fall Time15 uS
RoHS Details
Unit Weight0.003951 oz
SubcategoryMOSFETs
Pd - Power Dissipation3 W
USHTS8541290095
TradenameIntelliFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 us
Moisture Sensitivity Level1 (Unlimited)