参数项参数值
参数项参数值
Forward Transconductance - Min100 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.7 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance4.5 mOhms
KRHTS8541299000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23.4 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CasePowerDI3333-8
PackagingReel
PackagingMouseReel
PackagingCut Tape
Qg - Gate Charge41.3 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMT6007LFG-7
Factory Pack Quantity2000
SeriesDMT6007
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
Channel ModeEnhancement
Fall Time9.7 ns
USHTS8541290095
Unit Weight0.564383 oz
Pd - Power Dissipation2.2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time4.3 ns
Moisture Sensitivity Level1 (Unlimited)