参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 150 mA, 2 V
Gain Bandwidth Product fT145 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
Width2.6 mm
Height1.6 mm
Length4.6 mm
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.004603 oz
RoHS Details
SeriesBCX52
Pd - Power Dissipation1300 mW
BrandNexperia
Part # Aliases933663050115
ImageNexperia BCX52-10,115
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS MED PWR TAPE-7
Moisture Sensitivity Level1 (Unlimited)