参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs175mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)190W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1817 pF @ 100 V
Qualification-
Moisture Sensitivity LevelNot Applicable